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IRFR210TRPBF中文資料威世科技數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRFR210TRPBF規(guī)格書(shū)詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Surface Mount (IRFR210/SiHFR210)
? Straight Lead (IRFU210/SiHFU210)
? Available in Tape and Reel
? Fast Switching
? Ease of Paralleling
? Lead (Pb)-free Available
?
產(chǎn)品屬性
- 型號(hào):
IRFR210TRPBF
- 功能描述:
MOSFET N-Chan 200V 2.6 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
INFINEON |
2022+ |
TO-252 |
57550 |
詢價(jià) | |||
VISHAY/威世 |
22+ |
TO-252 |
12500 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
VISHAY/威世 |
24+ |
TO-252 |
5715 |
只做原裝 有掛有貨 假一罰十 |
詢價(jià) | ||
VISHAY |
21+ |
TO-252 |
12588 |
原裝正品,自己庫(kù)存 假一罰十 |
詢價(jià) | ||
VISHAY |
2020+ |
TO-252 |
8000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
VISHAY |
24+ |
DPAK |
65300 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
Vishay |
19+ |
74971 |
原廠代理渠道,每一顆芯片都可追溯原廠; |
詢價(jià) | |||
INFINEON/英飛凌 |
22+ |
TO-252 |
10000 |
原裝正品 |
詢價(jià) | ||
24+ |
N/A |
67000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
VISHAY/威世 |
24+ |
TO-252 |
6098 |
只做原廠渠道 可追溯貨源 |
詢價(jià) |