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IRFR2407PBF中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書
IRFR2407PBF規(guī)格書詳情
Description
Seventh Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Surface Mount (IRFR2407)
● Straight Lead (IRFU2407)
● Advanced Process Technology
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFR2407PBF
- 功能描述：
MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
DISCRETE |
75 |
IR |
7925 |
詢價 | |||
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 | |||
INFINEON/英飛凌 |
2022+ |
75 |
6600 |
只做原裝,假一罰十,長期供貨。 |
詢價 | ||
IR |
15+ |
原廠原裝 |
7925 |
進口原裝現(xiàn)貨假一賠十 |
詢價 | ||
IR |
23+ |
98000 |
詢價 | ||||
IR |
21+ |
TO252 |
20000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
24+ |
65230 |
詢價 | ||||
Infineon |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
ir |
24+ |
500000 |
行業(yè)低價,代理渠道 |
詢價 |
