IRFR2605中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRFR2605規(guī)格書詳情
VDSS = 55V
RDS(on) = 0.075?
ID = 19A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These benefits, combined with the ruggedized device design that HEXFETs are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● ESD Protected
● Surface Mount (IRFR2605)
● Straight Lead (IRFU2605)
● 150°C Operating Temperature
● Repetitive Avalanche Rated
● Fast Switching
產(chǎn)品屬性
- 型號(hào)：
IRFR2605
- 制造商：
IRF
- 制造商全稱：
International Rectifier
- 功能描述：
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
1029 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
Infineon Technologies |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原裝,支持實(shí)單 |
詢價(jià) | ||
IR |
23+ |
TO-252 |
15000 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
VB |
D-PAK |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
23+ |
TO-252 |
35890 |
詢價(jià) | |||
I |
22+ |
D-PAK |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IR |
06+ |
TO-252 |
15000 |
原裝 |
詢價(jià) | ||
IR |
2021+ |
TO-252 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
Infineon Technologies |
23+ |
原裝 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) |
