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IRFR4104TRPBF

Advanced Process Technology

IRF

International Rectifier

IRFR4104TRPBF

N-Channel 4 -V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRFR4104TRR

AUTOMOTIVEGRADE

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU4104

PowerMOSFET(Vdss=40V,Rds(on)=5.5mohm,Id=42A)

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitc

IRF

International Rectifier

IRFU4104

AdvancedProcessTechnology

IRF

International Rectifier

IRFU4104

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU4104

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRFU4104

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU4104PBF

HEXFET?PowerMOSFET(VDSS=40V,RDS(on)=5.5m廓,ID=42A)

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

IRF

International Rectifier

IRFU4104PBF

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFR4104TRPBF

  • 功能描述：

    MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-252
20540
保證進(jìn)口原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
IR
2020+
TO-252
22000
全新原裝正品 現(xiàn)貨庫(kù)存 價(jià)格優(yōu)勢(shì)
 詢(xún)價(jià)
Infineon Technologies
24+
D-Pak
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢(xún)價(jià)
IR
16+
TO-252
6130
全新原裝/深圳現(xiàn)貨庫(kù)2
 詢(xún)價(jià)
IR
24+
TO-252
20000
只做原廠(chǎng)渠道 可追溯貨源
 詢(xún)價(jià)
INFINEON
100000
代理渠道/只做原裝/可含稅
 詢(xún)價(jià)
INFINEON/英飛凌
2021+
TO-252
9000
原裝現(xiàn)貨,隨時(shí)歡迎詢(xún)價(jià)
 詢(xún)價(jià)
INFINEON/英飛凌
24+
NA
8000
全新原裝現(xiàn)貨
 詢(xún)價(jià)
Infineon(英飛凌)
24+
TO-252
12048
原廠(chǎng)可訂貨,技術(shù)支持,直接渠道。可簽保供合同
 詢(xún)價(jià)
INFINEON/英飛凌
24+
TO-252
160092
明嘉萊只做原裝正品現(xiàn)貨
 詢(xún)價(jià)
更多IRFR4104TRPBF供應(yīng)商 更新時(shí)間2025-5-18 22:37:00

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