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IRFR4105PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR4105)
● Straight Lead (IRFU4105)
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFR4105PBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-252 |
3045 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
Infineon(英飛凌) |
24+ |
TO-252 |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IR |
22+ |
TO-252 |
8000 |
原裝正品支持實單 |
詢價 | ||
Infineon |
2022+ |
原廠原包裝 |
6800 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 | |||
Infineon |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應(yīng) |
詢價 | ||
IR |
24+ |
TO-252 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
20+ |
DPAK |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
1347+ |
TO-252 |
52 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
23+ |
D2PAK |
7750 |
全新原裝優(yōu)勢 |
詢價 |
