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IRFR9024NPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRFR9024NPBF規(guī)格書(shū)詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Ultra Low On-Resistance
● P-Channel
● Surface Mount (IRFR9024N)
● Straight Lead (IRFU9024N)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRFR9024NPBF
- 功能描述：
MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
700 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
詢價(jià) | ||
IR(VISHAY) |
23+ |
TO-252 |
20000 |
全新原裝假一賠十 |
詢價(jià) | ||
IR |
2020+ |
TO-252 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
IR |
10+ |
D-pak |
5000 |
普通 |
詢價(jià) | ||
IR |
21+ |
TO-252 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR/infineon |
22+ |
TO-252 |
500000 |
P溝道場(chǎng)效應(yīng)管-55V,0.175mO,-8.8A,38W |
詢價(jià) | ||
IR |
24+ |
65230 |
詢價(jià) | ||||
IR |
22+ |
TO-252 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IR |
TO-252 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) |
