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IRFS4227PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFS4227PBF規(guī)格書詳情
Description
This HEXFET Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch applications in Plasma Display Panels.
Features
● Advanced Process Technology
● Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
● Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
● Low QG for Fast Response
● High Repetitive Peak Current Capability for
Reliable Operation
● Short Fall & Rise Times for Fast Switching
●175°C Operating Junction Temperature for
Improved Ruggedness
● Repetitive Avalanche Capability for Robustness
and Reliability
產(chǎn)品屬性
- 型號:
IRFS4227PBF
- 功能描述:
MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
65230 |
詢價 | ||||
IR |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
原裝 |
1923+ |
原廠封裝 |
5689 |
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價 | ||
Infineon(英飛凌) |
21+ |
TO-263 |
157 |
原裝現(xiàn)貨,假一罰十 |
詢價 | ||
IR |
2023+ |
D2-PAK |
50000 |
原裝現(xiàn)貨 |
詢價 | ||
INFINEON/英飛凌 |
2022+ |
50 |
6600 |
只做原裝,假一罰十,長期供貨。 |
詢價 | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價 | |||
I.R |
16+ |
15 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
IR/VISHAY |
23+ |
D2-PAK |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
24+ |
NA/ |
9915 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 |