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IRFU214

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU214

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR214,SiHFR214) ?Straightlead(IRFU214,SiHFU214) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導體

IRFU214

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

HEXFET?PowerMOSFET VDSS=250V RDS(on)=2.0Ω ID=2.2A

IRF

International Rectifier

IRFU214

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheyareadvancedpowerMOSFETsaredesignedforuseinapplicationssuchasswitchingregulators

Intersil

Intersil Corporation

IRFU214

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

VishayVishay Siliconix

威世科技威世科技半導體

IRFU214

Marking：IPAK；Package：TO-251；iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFU214

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFU214A

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFU214B

250V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFU214PBF

HEXFET? Power MOSFET

HEXFET?PowerMOSFET ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR214) ?StraightLead(IRFU214) ?AvailableinTape&Reel ?FastSwitching ?EaseofParalleling ?Lead-Free

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFU214

  • 功能描述：

    MOSFET N-Chan 250V 2.2 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-251
1868
只做原廠渠道 可追溯貨源
 詢價
INFINEON/英飛凌
06+
TO-251
1806
原裝進口無鉛現(xiàn)貨
 詢價
Vishay
2025+
TO-251-3
32560
原裝優(yōu)勢絕對有貨
 詢價
IR
23+
TO-251
35890
詢價
IR
06+
TO-251
12000
原裝庫存
 詢價
IR
24+
TO-251AA
8866
詢價
華晶
2012+
TO251
999999
全新原裝進口自己庫存優(yōu)勢
 詢價
IR
2015+
TO251
19898
專業(yè)代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
23+
TO263-3
1058
特價庫存
 詢價
IR
2018+
TO251
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心
 詢價
更多IRFU214供應商 更新時間2025-4-10 16:36:00

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