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IRFU5305PBF中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書
IRFU5305PBF規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET? Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR5305)
● Straight Lead (IRFU5305)
● Advanced Process Technology
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFU5305PBF
- 功能描述：
MOSFET MOSFT P-Ch -55V -28A 65mOhm 42nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-251 |
3000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
INFINEON/IR |
1907+ |
NA |
2625 |
20年老字號,原裝優(yōu)勢長期供貨 |
詢價 | ||
INFINEON/英飛凌 |
22+ |
289600 |
絕對原裝正品現(xiàn)貨,假一賠十 |
詢價 | |||
INFINEON/英飛凌 |
2407+ |
TO251 |
30098 |
全新原裝!倉庫現(xiàn)貨,大膽開價! |
詢價 | ||
Infineon |
23+ |
MOSFET |
5864 |
原裝原標(biāo)原盒 給價就出 全網(wǎng)最低 |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO-251 |
11858 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
IR |
17+ |
TO-251 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO-251 |
60000 |
進口原裝正品現(xiàn)貨熱賣 |
詢價 | ||
IR |
22+ |
TO-251 |
2000 |
原裝正品 |
詢價 | ||
IR/INFI |
2020+ |
TO-251 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 |
