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IRFW620B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRL620

PowerMOSFET(Vdss=200V,Rds(on)=0.80ohm,Id=5.2A)

VDSS=200V RDS(on)=0.80? ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

IRL620

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.80 Qg(Max.)(nC)16 Qgs(nC)2.7 Qgd(nC)9.6 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivene

VishayVishay Siliconix

威世科技威世科技半導體

IRL620

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRL620

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRL620

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 N

VishayVishay Siliconix

威世科技威世科技半導體

IRL620A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.8? ID=5A FEATURES ?Logic-LevelGateDrive ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.609?

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRL620A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRL620PBF

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.80 Qg(Max.)(nC)16 Qgs(nC)2.7 Qgd(nC)9.6 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivene

VishayVishay Siliconix

威世科技威世科技半導體

IRL620PBF

HEXFETPOWERMOSFET

VDSS=200V RDS(on)=0.80? ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

詳細參數

  • 型號：

    IRFW620B

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD
23+
TO-263
9526
詢價
仙童
05+
TO-263
3800
原裝進口
 詢價
FAIRCHIL
23+
TO-263
9500
專業(yè)優(yōu)勢供應
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
FAIRCHILDRCHILD
2022+
SOT263
29880
原廠代理 終端免費提供樣品
 詢價
FAIRCHILDRCHILD
23+
SOT263
6800
專注配單,只做原裝進口現貨
 詢價
FAIRCHILD
2025+
TO-263
4675
全新原廠原裝產品、公司現貨銷售
 詢價
FAIRCHILDRCHILD
23+
SOT263
6800
專注配單,只做原裝進口現貨
 詢價
FAIRCHILDRCHILD
23+
SOT263
7000
詢價
FSC/ON
23+
原包裝原封 □□
1600
原裝進口特價供應 QQ 1304306553 更多詳細咨詢 庫存
 詢價
更多IRFW620B供應商 更新時間2025-3-16 14:00:00

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