IRFZ24NL中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFZ24NL規(guī)格書詳情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
? Advanced Process Technology
? Surface Mount (IRFZ24NS)
? Low-profile through-hole (IRFZ24NL)
? 175°C Operating Temperature
? Fast Switching
? Fully Avalanche Rated
產(chǎn)品屬性
- 型號:
IRFZ24NL
- 功能描述:
MOSFET N-CH 55V 17A TO-262
- RoHS:
否
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-262 |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
IR |
24+ |
30000 |
房間原裝現(xiàn)貨特價熱賣,有單詳談 |
詢價 | |||
IR |
2022 |
TO-220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
IR |
2012 |
TO-220 |
900000 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價 | ||
IR |
24+ |
TO-262 |
8866 |
詢價 | |||
ADVINRMOTZET |
23+ |
TO/263 |
7000 |
絕對全新原裝!100%保質(zhì)量特價!請放心訂購! |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 | |||
Infineon Technologies |
2022+ |
TO-262-3,長引線,I2Pak,TO-26 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
IR |
23+ |
TO-262 |
7600 |
全新原裝現(xiàn)貨 |
詢價 |