IRFZ46NS中文資料IRF數據手冊PDF規(guī)格書
IRFZ46NS規(guī)格書詳情
Description
Advanced HEXFET?Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
? Advanced Process Technology
? Surface Mount(IRFZ46NS)
? Low-profile through-hole(IRFZ46NL)
? 175°C Operating Temperature
? Fast Switching
? Fully Avalanche Rated
產品屬性
- 型號:
IRFZ46NS
- 功能描述:
MOSFET N-CH 55V 53A D2PAK
- RoHS:
否
- 類別:
分離式半導體產品 >> FET - 單
- 系列:
HEXFET®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR/VISHAY |
23+ |
NA/ |
32500 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
INFINEON/英飛凌 |
2020+ |
NA |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
24+ |
D2-PAK |
16800 |
絕對原裝進口現貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
INFINEON |
21+ |
TO-263 |
800 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
INFINEON/IR |
24+ |
NA |
30000 |
房間原裝現貨特價熱賣,有單詳談 |
詢價 | ||
IR |
23+ |
TO-263 |
4500 |
全新原裝、誠信經營、公司現貨銷售 |
詢價 | ||
IR |
23+ |
TO-263 |
35890 |
詢價 | |||
IR |
24+ |
TO-263 |
501433 |
免費送樣原盒原包現貨一手渠道聯系 |
詢價 | ||
IR |
22+23+ |
TO263 |
72934 |
絕對原裝正品現貨,全新深圳原裝進口現貨 |
詢價 | ||
IR |
22+ |
TO-263 |
8000 |
原裝正品支持實單 |
詢價 |