IRFZ48S中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書
IRFZ48S規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application.
The through-hole version (IRFZ48L/SiHFZ48L) is available for low-profile applications.
FEATURES
? Advanced Process Technology
? Surface Mount (IRFZ48S/SiHFZ48S)
? Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)
? 175 °C Operating Temperature
? Fast Switching
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號：
IRFZ48S
- 功能描述：
MOSFET N-Chan 60V 50 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-263 |
35890 |
詢價 | |||
VISHAY/威世 |
22+ |
TO-263 |
18500 |
原裝正品支持實單 |
詢價 | ||
IR |
24+ |
TO-263 |
9000 |
只做原裝正品 有掛有貨 假一賠十 |
詢價 | ||
IR |
24+ |
TO-263 |
35200 |
一級代理/放心采購 |
詢價 | ||
IR |
23+ |
TO-220 |
117849 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
24+ |
TO-263 |
300 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
23+ |
TO-263 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
24+ |
TO-263 |
56000 |
公司進口原裝現(xiàn)貨 批量特價支持 |
詢價 | ||
IR |
24+ |
TO-220 |
36800 |
詢價 | |||
IR |
20+ |
TO-263 |
300 |
進口原裝現(xiàn)貨,假一賠十 |
詢價 |
