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IRGSL6B60K

INSULATED GATE BIPOLAR TRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?LowEMI. ?ExcellentCurrent

IRF

International Rectifier

IRGSL6B60KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-220isavailableinPbFasaLead-Free Benefits ?BenchmarkEff

IRF

International Rectifier

IRGSL6B60KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGSL6B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

IRGSL6B60KPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?LowEMI. ?ExcellentCurrentSharing

IRF

International Rectifier

IRGSL6B60KDPBF

Package：TO-262-3，長引線，I2Pak，TO-262AA；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT NPT 600V 13A TO262

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRGSL6B60KPBF

Package：TO-262-3，長引線，I2Pak，TO-262AA；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 13A 90W TO262

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRGB6B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?10μsShortCircuitCapability. ?SquareRBSOA. ?PositiveVCE(on)TemperatureCoefficient. Benefits ?BenchmarkEfficiencyforMotorControl. ?RuggedTransientPerformance. ?LowEMI. ?ExcellentCurrent

IRF

International Rectifier

IRGB6B60KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?TO-220isavailableinPbFasaLead-Free Benefits ?BenchmarkEff

IRF

International Rectifier

IRGB6B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?LowVCE(on)NonPunchThroughIGBTTechnology. ?LowDiodeVF. ?10μsShortCircuitCapability. ?SquareRBSOA. ?UltrasoftDiodeReverseRecoveryCharacteristics. ?PositiveVCE(on)TemperatureCoefficient. ?Lead-Free Benefits ?BenchmarkEfficiencyforMotorControl. ?Ru

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRGSL6B60K

  • 制造商：

    IRF

  • 制造商全稱：

    International Rectifier

  • 功能描述：

    INSULATED GATE BIPOLAR TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IR
20+
TO-262
20500
汽車電子原裝主營-可開原型號增稅票
 詢價
IR
24+
TO-262
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
IR
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
23+
TO-262
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
21+
TO-262
10000
原裝現(xiàn)貨假一罰十
 詢價
IR
2022
TO-262
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
IR
22+
TO-262
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
IR
23+
NA/
5690
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
IR
23+
TO-262
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
更多IRGSL6B60K供應(yīng)商 更新時間2025-2-7 9:02:00

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