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IRL1004PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRL1004PBF規(guī)格書詳情
Description
Fifth Generation HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
? Logic-Level Gate Drive
? Advanced Process Technology
? Ultra Low On-Resistance
? Dynamic dv/dt Rating
? 175°C Operating Temperature
? Fast Switching
? Fully Avalanche Rated
? Lead-Free
產(chǎn)品屬性
- 型號：
IRL1004PBF
- 功能描述：
MOSFET MOSFT 130A 66.7nC 6.5mOhm LogLvAB
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
10+ |
TO-220 |
2918 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
2016+ |
TO220 |
3029 |
公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
詢價 | ||
Infineon Technologies |
24+ |
TO-220AB |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
IR |
23+ |
TO-220AB- |
7750 |
全新原裝優(yōu)勢 |
詢價 | ||
IR |
TO-220 |
67410 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 | |||
IR |
22+ |
TO-220 |
5623 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
45000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | |||
IR |
23+ |
NA/ |
6249 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
IR |
TO-220 |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
Infineon Technologies |
21+ |
TO2203 |
13880 |
公司只售原裝,支持實單 |
詢價 |
