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IRL3705ZPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRL3705ZPBF
廠商型號(hào)

IRL3705ZPBF

功能描述

HEXFET? Power MOSFET

文件大小

289.46 Kbytes

頁(yè)面數(shù)量

13 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-15 16:10:00

IRL3705ZPBF規(guī)格書(shū)詳情

VDSS = 55V

RDS(on) = 8.0m?

ID = 75A

Description

Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety of other applications.

Features

● Logic Level

● Advanced Process Technology

● Ultra Low On-Resistance

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

● Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRL3705ZPBF

  • 功能描述:

    MOSFET MOSFT 55V 86A 8mOhm 40nC Log LvlAB

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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