IRL630中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRL630規(guī)格書詳情
VDSS = 200V
RDS(on) = 0.40?
ID = 9.0A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Dynamic dv/dt Rating
● Repetitive Avalanche Rated
● Logic-Level Gate Drive
● RDS(ON) Specified at VGS = 4V & 5V
● 150°C Operating Temperature
● Fast Switching
● Ease of paralleling
產(chǎn)品屬性
- 型號(hào):
IRL630
- 功能描述:
MOSFET N-Chan 200V 9.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
ir |
05+ |
TO-220 |
15500 |
全新原裝 絕對(duì)有貨 |
詢價(jià) | ||
CHINA |
22+ |
SMD-1B2-01BTO-257 |
640 |
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方! |
詢價(jià) | ||
IR |
23+ |
TO-263 |
9000 |
原裝正品假一罰百!可開增票! |
詢價(jià) | ||
IR |
21+ |
TO-263 |
30490 |
原裝現(xiàn)貨庫(kù)存 |
詢價(jià) | ||
SILICONIXVISHAY |
21+ |
NA |
12820 |
只做原裝,質(zhì)量保證 |
詢價(jià) | ||
FSC |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
FAI |
18+ |
TO-220 |
85600 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) | ||
FAIRCHIL |
24+ |
TO-220 |
2789 |
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨! |
詢價(jià) | ||
VISHAY |
23+ |
TO-220AB |
24744 |
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
IR |
2048+ |
TO-220 |
9851 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) |