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IRLU014NPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRLU014NPBF
廠商型號(hào)

IRLU014NPBF

功能描述

HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14廓 , ID = 10A )

文件大小

281.42 Kbytes

頁(yè)面數(shù)量

11 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-29 11:14:00

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IRLU014NPBF規(guī)格書詳情

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

● Logic-Level Gate Drive

● Surface Mount (IRLR024N)

● Straight Lead (IRLU024N)

● Advanced Process Technology

● Fast Switching

● Fully Avalanche Rated

● Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRLU014NPBF

  • 功能描述:

    MOSFET 55V 1 N-CH HEXFET 140mOhms 5.3nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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