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IRLZ34N

N-channel enhancement mode Logic level TrenchMOS transistor

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepower

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRLZ34N

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRLZ34N

N-Channel MOSFET Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤35m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRLZ34NL

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ34NLPBF

HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035廓 , ID = 30A )

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ34NPBF

HEXFET Power MOSFET

IRF

International Rectifier

IRLZ34NS

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ34NSPBF

HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035廓 , ID = 30A )

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLZ34N_18

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRLZ34NPBF

Advanced Process Technology

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRLZ34N

  • 制造商：

    International Rectifier

  • 功能描述：

    MOSFET N LOGIC TO-220

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO220
5000
進(jìn)口原裝現(xiàn)貨
 詢價(jià)
IR
ROHS全新原裝
TO-220
9782
原裝現(xiàn)貨在線咨詢樣品※技術(shù)支持專業(yè)電子元器件授權(quán)
 詢價(jià)
IR
24+
TO 220
161164
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
24+/25+
TO-220
1000
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
IR
23+
TO-220
35890
詢價(jià)
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
 詢價(jià)
IR
24+
To-220
89585
詢價(jià)
IR
23+
TO220
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
IR
24+
原廠封裝
2180
原裝現(xiàn)貨假一罰十
 詢價(jià)
更多IRLZ34N供應(yīng)商 更新時(shí)間2025-4-2 9:26:00

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