IS42S86400B-75ETLI中文資料北京矽成數(shù)據(jù)手冊PDF規(guī)格書

OVERVIEW

ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

FEATURES

? Clock frequency: 166, 143, 133 MHz

? Fully synchronous; all signals referenced to a positive clock edge

? Internal bank for hiding row access/precharge

? Power supply

Vdd Vddq

IS42/45S16320B 3.3V 3.3V

IS42S86400B 3.3V 3.3V

? LVTTL interface

? Programmable burst length

– (1, 2, 4, 8, full page)

? Programmable burst sequence: Sequential/Interleave

? Auto Refresh (CBR)

? Self Refresh

? 8K refresh cycles every 64 ms

? Random column address every clock cycle

? Programmable CAS latency (2, 3 clocks)

? Burst read/write and burst read/single write operations capability

? Burst termination by burst stop and precharge command

? Available in 54-pin TSOP-II and 54-ball W-BGA (x16 only)

? Operating Temperature Range:

Commercial: 0°C to +70°C

Industrial: -40°C to +85°C

Automotive, A1: -40°C to +85°C