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ISL6596集成電路(IC)的柵極驅(qū)動(dòng)器規(guī)格書PDF中文資料

ISL6596
廠商型號(hào)

ISL6596

參數(shù)屬性

ISL6596 封裝/外殼為8-SOIC(0.154",3.90mm 寬);包裝為管件;類別為集成電路(IC)的柵極驅(qū)動(dòng)器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 8SOIC

功能描述

Synchronous Rectified MOSFET Driver

封裝外殼

8-SOIC(0.154",3.90mm 寬)

文件大小

219.32 Kbytes

頁(yè)面數(shù)量

11 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

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更新時(shí)間

2025-2-12 10:30:00

ISL6596規(guī)格書詳情

The ISL6596 is a high frequency, MOSFET driver optimized

to drive two N-Channel power MOSFETs in a synchronous

buck converter topology. This driver combined with Intersil’s

Multi-Phase Buck PWM controllers forms a complete singlestage core-voltage regulator solution with high efficiency

performance at high switching frequency for advanced

microprocessors.

The IC is biased by a single low voltage supply (5V),

minimizing driver switching losses in high MOSFET gate

capacitance and high switching frequency applications.

Each driver is capable of driving a 3nF load with less than

10ns rise/fall time. Bootstrapping of the upper gate driver is

implemented via an internal low forward drop diode,

reducing implementation cost, complexity, and allowing the

use of higher performance, cost effective N-Channel

MOSFETs. Adaptive shoot-through protection is integrated

to prevent both MOSFETs from conducting simultaneously.

The ISL6596 features 4A typical sink current for the lower

gate driver, enhancing the lower MOSFET gate hold-down

capability during PHASE node rising edge, preventing power

loss caused by the self turn-on of the lower MOSFET due to

the high dV/dt of the switching node.

The ISL6596 also features an input that recognizes a

high-impedance state, working together with Intersil

multi-phase 3.3V or 5V PWM controllers to prevent negative

transients on the controlled output voltage when operation is

suspended. This feature eliminates the need for the schottky

diode that may be utilized in a power system to protect the

load from negative output voltage damage.

Features

? Drives Two N-Channel MOSFETs

? Adaptive Shoot-Through Protection

? 0.4Ω On-Resistance and 4A Sink Current Capability

? Supports High Switching Frequency

? Fast Output Rise and Fall Time

? Low Tri-State Hold-Off Time (20ns)

? Support 3.3V and 5V PWM Input

? Low Quiescent Supply Current

? Power-On Reset

? Expandable Bottom Copper Pad for Heat Spreading

? Dual Flat No-Lead (DFN) Package

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

No Leads-Product Outline

- Near Chip-Scale Package Footprint; Improves PCB

Efficiency and Thinner in Profile

? Pb-Free (RoHS Compliant)

Applications

? Core Voltage Supplies for Intel? and AMD?

Microprocessors

? High Frequency Low Profile High Efficiency DC/DC

Converters

? High Current Low Voltage DC/DC Converters

? Synchronous Rectification for Isolated Power Supplies

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    ISL6596CBZ-T

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 柵極驅(qū)動(dòng)器

  • 包裝:

    管件

  • 驅(qū)動(dòng)配置:

    半橋

  • 通道類型:

    同步

  • 柵極類型:

    N 溝道 MOSFET

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 電流 - 峰值輸出(灌入,拉出):

    -,4A

  • 輸入類型:

    非反相

  • 上升/下降時(shí)間(典型值):

    8ns,8ns

  • 工作溫度:

    0°C ~ 125°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    8-SOIC(0.154",3.90mm 寬)

  • 供應(yīng)商器件封裝:

    8-SOIC

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SOIC

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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