G4BC40S

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT(Vces=600V,Vce(on)typ.=1.32V,@Vge=15V,Ic=31A)

Features ?Standard:optimizedforminimumsaturation voltageandlowoperatingfrequencies(

G4BC40U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.72V,@Vge=15V,Ic=20A)

Features ?UltraFast:optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Gener

IRC4BC40F

INSULATEDGATEBIPOLARTRANSISTOR

IRG4BC40F

INSULATEDGATEBIPOLARTRANSISOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

Features ?Fast:optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-220ABpackage Benefits ?Genera

IRG4BC40F

FitRate/EquivalentDeviceHours

IRG4BC40FD

FitRate/EquivalentDeviceHours

IRG4BC40FPBF

FastSpeedIGBTINSULATEDGATEBIPOLARTRANSISTORFastSpeedIGBT

Benefits ?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalentindustry-standardGeneration3IRIGBTs Features ?Fast:optimizedformediumoperatingfrequencies(1-5kHzinhards

IRG4BC40K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.1V,@Vge=15V,Ic=25A)

Features ?ShortCircuitRatedUltraFast:optimizedforhigh operatingfrequencies>5.0kHz,andShortCircuit Ratedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovideshigherefficiency thanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Generation4IGB

IRG4BC40K

FitRate/EquivalentDeviceHours

IRG4BC40KD

FitRate/EquivalentDeviceHours