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IXFN27N80

HiPerFET Power MOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFN27N80

HiPerFETTM Power MOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFN27N80

HiPerFET Power MOSFETs

IXYS

IXYS Corporation

IXFN27N80Q

HiPerFET Power MOSFETs Q-Class

SingleDieMOSFET N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackage ?EpoxymeetUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?IXYSadvancedlowQgprocess ?Ruggedpolysilicongatecellstructure

IXYS

IXYS Corporation

IXFK27N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK27N80

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFK27N80

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFK27N80

HiPerFETTMPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFK27N80Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=27A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK27N80Q

HiPerFETPowerMOSFETsQ-CLASS

SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,HighdV/dt,Lowtrr Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?RatedforunclampedInducti

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號:

    IXFN27N80

  • 功能描述:

    MOSFET 800V 27A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
19+/20+
SOT-227B
1000
主打產(chǎn)品價格優(yōu)惠.全新原裝正品
詢價
IXYS/艾賽斯
1580+
MODULE
550
原裝正品 可含稅交易
詢價
IXYS/艾賽斯
21+
MODULE
550
十年專營,原裝現(xiàn)貨,假一賠十
詢價
IXYS/艾賽斯
23+
MODULE
12500
全新原裝現(xiàn)貨,假一賠十
詢價
IXYS/艾賽斯
MODULE
23+
6000
專業(yè)配單原裝正品假一罰十
詢價
IXYS/艾賽斯
18+
MODULE
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
詢價
IXYS
23+
模塊
3562
詢價
IXYS
23+
模塊
320
全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!
詢價
IXYS
23+
MOSFETN-CH800V27ASOT-227
1731
專業(yè)代理銷售半導(dǎo)體模塊,能提供更多數(shù)量
詢價
IXYS場效應(yīng)
100
原裝現(xiàn)貨,價格優(yōu)惠
詢價
更多IXFN27N80供應(yīng)商 更新時間2025-4-26 13:01:00