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IXTV26N60P

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXTV26N60P

PolarHV Power MOSFET

IXYS

IXYS Corporation

IXTV26N60PS

PolarHV Power MOSFET

IXYS

IXYS Corporation

IRFP26N60L

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=0.25?(MAX) ?Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP26N60L

PowerMOSFET

FEATURES ?Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications ?Lowergatechargeresultsinsimplerdrive requirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?Highergatevoltagethresholdoffersimprovednoise immunity ?Materialcategoriza

VishayVishay Siliconix

威世科技威世科技半導體

IRFP26N60L

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP26N60L

SMPSMOSFET

FeaturesandBenefits ?Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity Applica

IRF

International Rectifier

IRFP26N60L

PowerMOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity

VishayVishay Siliconix

威世科技威世科技半導體

IRFP26N60LPBF

HEXFETPowerMOSFET(VDSS=600V,RDS(on)typ.=210m廓,Trrtyp.=170ns,ID=26A)

FeaturesandBenefits ?Superfastbodydiodeeliminatestheneedforexternal diodesinZVSapplications ?LowerGatechargeresultsinsimplerdriverequirements ?EnhanceddV/dtcapabilitiesofferimprovedruggedness ?HigherGatevoltagethresholdoffersimprovednoiseimmunity ?Lead-

IRF

International Rectifier

IRFP26N60LPBF

PowerMOSFET

PowerMOSFET FEATURES ?SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications ?LowerGateChargeResultsinSimplerDriveRequirements ?EnhanceddV/dtCapabilitiesOfferImprovedRuggedness ?HigherGateVoltageThresholdOffersImprovedNoiseImmunity

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IXTV26N60P

  • 功能描述：

    MOSFET 26.0 Amps 600 V 0.27 Ohm Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
PLUS-220
300
詢價
IXYS
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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IXYS
22+
TO2203 Short Tab
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS/艾賽斯
23+
PLUS220
6000
原裝正品，支持實單
 詢價
IXYS
2022+
TO-220-3(SMT)標片
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
IXYS/艾賽斯
22+
PLUS220
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
IXYS(艾賽斯)
23+
N/A
7500
IXYS(艾賽斯)全系列在售
 詢價
IXYS
25+
PLUSTO-220
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
IXYS/艾賽斯
23+
PLUSTO-220SM
12300
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
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更多IXTV26N60P供應商 更新時間2025-5-25 13:30:00

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