JFE2140DR分立半導(dǎo)體產(chǎn)品的晶體管-JFET規(guī)格書PDF中文資料

JFE2140DR屬于分立半導(dǎo)體產(chǎn)品的晶體管-JFET。由德州儀器制造生產(chǎn)的JFE2140DR晶體管 - JFET結(jié)柵場效應(yīng)晶體管 (JFET) 是用作電子控制開關(guān)、放大器或電壓控制電阻器的器件。在柵極端子與源極端子之間施加適當(dāng)極性的電勢差就會增加電流流動的阻力，這意味著源極端子與漏極端子之間通道中流動的電流會更少。由于電荷流過源極與漏極端子之間的半導(dǎo)體通道，因此 JFET 不需要偏置電流。

1 Features

? Ultra-low noise:

– Voltage noise:

? 0.9 nV/√Hz at 1 kHz, IDS = 5 mA

? 1.1 nV/√Hz at 1 kHz, IDS = 2 mA

– Current noise: 1.6 fA/√Hz at 1 kHz

? Low VGS mismatch: 4 mV (max)

? Low gate current: 10 pA (max)

? Low input capacitance: 13 pF at VDS = 5 V

? High gate-to-drain and gate-to-source breakdown

voltage: –40 V

? High transconductance: 30 mS

? Packages: SOIC, 2-mm × 2-mm WSON

2 Applications

? Microphone inputs

? Hydrophones and marine equipment

? DJ controllers, mixers, and other DJ equipment

? Professional audio mixer or control surface

? Guitar amplifier and other music instrument amp

? Condition monitoring sensor

3 Description

The JFE2140 is a Burr-Brown? Audio, matchedpair

discrete JFET built using Texas Instruments'

modern, high-performance, analog bipolar process.

The JFE2140 features performance not previously

available in older discrete JFET technologies. The

JFE2140 offers excellent noise performance across

all current ranges, where the quiescent current can

be set by the user from 50 μA to 20 mA. When

biased at 5 mA, the device yields 0.9 nV/√Hz of inputreferred

noise, giving ultra-low noise performance with

extremely high input impedance (> 1 TΩ). In addition,

the matching between JFETs is tested to ±4 mV,

providing low offset and high CMRR performance

for differential pair configurations. The JFE2140 also

features integrated diodes connected to separate

clamp nodes to provide protection without the addition

of high leakage, nonlinear external diodes.

The JFE2140 can withstand a high drain-to-source

voltage of 40?V, as well as gate-to-source and gate-todrain

voltages down to –40 V. The temperature range

is specified from –40°C to +125°C.