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IKY150N65EH7

Marking：K150EEH7；Package：PG-TO247-4-PLUS-NN5.1；High speed and low saturation voltage 650 V TRENCHSTOP? IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=650V ?IC=150A ?Lowswitchinglosses ?Verylowcollector-emittersaturationvoltageVCEsat ?Verysoft,fastrecoveryantiparalleldiode ?Smoothswitchingbehavior ?Humidityrobustness ?Optimizedforhardswitching,two-andthree-leveltopologies ?Completeprod

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

K1500SA

Marking：K15S；Package：SMA；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

K1500SB

Marking：K15S；Package：DO-214AA；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

K1500SD1

Marking：K15S；Package：SOD-123FL；Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

TK155A60Z1

Marking：K155A60Z1；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.61mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK155A65Z

Marking：K155A65Z；Package：TO-220SIS；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK155E60Z1

Marking：K155E60Z1；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.61mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK155E65Z

Marking：K155E65Z；Package：TO-220；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) (2)High-speedswitchingpropertieswithlowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.73mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK155U60Z1

Marking：K155U60Z1；Package：TOLL；MOSFETs Silicon N-Channel MOS

Applications ?SwitchingPowerSupplies Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) (2)High-speedswitchingpropertieswiththelowercapacitance. (3)Enhancementmode:Vth=3to4V(VDS=10V,ID=0.61mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

TK15A60U

Marking：K15A60U；Package：SC-67；Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

SwitchingRegulatorApplications ?Lowdrain-sourceON-resistance:RDS(ON)=0.24?(typ.) ?Highforwardtransferadmittance:?Yfs?=8.5S(typ.) ?Lowleakagecurrent:IDSS=100μA(VDS=600V) ?Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

產(chǎn)品屬性

  • 產(chǎn)品編號：

    K15

  • 制造商：

    Carlo Gavazzi Inc.

  • 類別：

    開關(guān) > 配件

  • 包裝：

    散裝

  • 配件類型：

    操作鍵

  • 配套使用/相關(guān)產(chǎn)品：

    PS21S 和 PS42S 系列

  • 描述：

    BENT KEY 13MM (PS21S \u0026 PS42S)

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAYMAS
25+23+
SOD123FL
50454
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
新電源
23+
71
15000
全新原裝深圳現(xiàn)貨庫存,特價·
 詢價
日立
23+
TO-2463PL
2500
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
 詢價
FUJI
23+
TO-220
9516
詢價
TECCOR
1215+
DO-15X
150000
全新原裝,絕對正品,公司大量現(xiàn)貨供應(yīng).
 詢價
TOS
17+
TO-247
6200
詢價
Mtronpt
2020+
SMD4(晶振
1000
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
SUNMATE(森美特)
2019+ROHS
SMB/DO-214AA
66688
森美特高品質(zhì)產(chǎn)品原裝正品免費送樣
 詢價
05+
原廠原裝
474
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
Littelfuse
23+
TO-92
6680
全新原裝優(yōu)勢
 詢價
更多K15供應(yīng)商 更新時間2025-4-12 16:44:00

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