零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelMOSFET600V,0.4A | RECTRON Rectron Semiconductor | RECTRON | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體(臺灣)有限公司 | VBSEMI | ||
600VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
FULLYISOLATEDTMOSE-FETPOWERFIELDEFFECTTRANSISTOR
| MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOSPOWERFET1.0AMPERE600VOLTSRDS(on)=8.0OHM TMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerFieldEffectTransisterN-ChannelEnhancementModeSiliconGate PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTimesSpecif | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-ChannelMosfetTransistor ?DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. ?FEATURES ?DrainCurrent-ID=1A@TC=25°C ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=8Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirements | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產(chǎn)品股份有限公司 | NJSEMI |
詳細參數(shù)
- 型號:
K1N60SA
- 制造商:
FAIRCHILD
- 制造商全稱:
Fairchild Semiconductor
- 功能描述:
TRIAC(Silicon Bidirectional Thyristor)
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
ALPS/阿爾卑斯 |
23+ |
13000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | |||
Tyco |
21+ |
N/A |
2600 |
公司現(xiàn)貨,歡迎來詢。 |
詢價 | ||
DIODES/美臺 |
23+ |
SOT23-3 |
15000 |
全新原裝現(xiàn)貨,價格優(yōu)勢 |
詢價 | ||
MINI |
22+ |
NA |
5000 |
只做原裝,價格優(yōu)惠,長期供貨。 |
詢價 | ||
MINI |
NA |
8600 |
原裝正品,歡迎來電咨詢! |
詢價 | |||
Mini-Circuits |
24+ |
1000 |
優(yōu)勢貨源原裝正品 |
詢價 | |||
FUJI |
6000 |
面議 |
19 |
TO-3PL |
詢價 | ||
Mini-circuits |
18+ |
原廠原裝 |
6000 |
專注Mini射頻微波全系列,只做原裝正品,現(xiàn)貨庫存 |
詢價 | ||
mini-circuits |
2017+ |
SMD |
1585 |
只做原裝正品假一賠十! |
詢價 |
相關(guān)規(guī)格書
更多- K1NA09E00063
- K1NZ16H00002
- K1-PNKIT
- K1-PR-S60
- K1-RB-S60
- K1S161611A-I
- K1S16161CA-I
- K1S1616B1A-BI70
- K1S1616B1A-FI70
- K1S1616B1A-I
- K1S2816BCM
- K1S321611C
- K1S321611C-FI70000
- K1S321615M
- K1S321615M-EE10
- K1S32161CC-FI70
- K1S32161CD-BI7000
- K1S32161CD-FI70000
- K1S32161CE-BI70000
- K1S3216B1C-I
- K1S64161CC
- K1S64161CD-BI70000
- K1S6416BCC-I
- K1-SC-S60
- K1-SH-S60
- K1-SR-S60
- K1V10_10
- K1V10-4060
- K1V10-7000
- K1V10-7061
- K1V11-4000
- K1V11-4061
- K1V11-7060
- K1V12
- K1V12-4060
- K1V12-7000
- K1V12-7061
- K1V14_10
- K1V14-4060
- K1V14-7000
- K1V14-7061
- K1V16
- K1V16-4000
- K1V16-4061
- K1V16-7060
相關(guān)庫存
更多- K1NZ16H00001
- K1-PA2Z
- K1-PR-B60
- K1-RB-B60
- K1S161611A
- K1S16161CA
- K1S1616B1A
- K1S1616B1A-BI85
- K1S1616B1A-FI85
- K1S1616BCA
- K1S2816BCM-I
- K1S321611C-FI70
- K1S321611C-I
- K1S321615M-E
- K1S32161CC
- K1S32161CC-I
- K1S32161CD-FI70
- K1S32161CD-FI70T000
- K1S3216B1C
- K1S3216BCD
- K1S64161CC-BI70000
- K1S6416BCC
- K1-SC-B60
- K1-SH-B60
- K1-SR-B60
- K1V10
- K1V10-4000
- K1V10-4061
- K1V10-7060
- K1V11
- K1V11-4060
- K1V11-7000
- K1V11-7061
- K1V12-4000
- K1V12-4061
- K1V12-7060
- K1V14
- K1V14-4000
- K1V14-4061
- K1V14-7060
- K1V15
- K1V16_10
- K1V16-4060
- K1V16-7000
- K1V16-7061