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K4E640812E-TC/L

8M x 8bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導體

K4E640812B

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導體

K4E640812C

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導體

K4E640812E

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導體

K4E640812E-JC/L

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導體

K4E640812E-JCSLASHL

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導體

K4E640812E-TCSLASHL

8Mx8bitCMOSDynamicRAMwithExtendedDataOut

DESCRIPTION Thisisafamilyof8,388,608x8bitExtendedDataOutModeCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Refreshcycle(4KRef.or8KRef.),accesstime(-45,-50or-60),powerconsumption(NormalorLowpower)areoptionalfe

SamsungSamsung semiconductor

三星三星半導體

詳細參數(shù)

  • 型號：

    K4E640812E-TC/L

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    8M x 8bit CMOS Dynamic RAM with Extended Data Out

供應商型號品牌批號封裝庫存備注價格
SAMSUNG
23+
TSOP
3000
特價庫存
 詢價
SAMSUNG
6000
面議
19
TSOP
 詢價
SAMSUNG/三星
21+
TSSOP
10000
原裝現(xiàn)貨假一罰十
 詢價
SAMSUNG/三星
TSSOP
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
 詢價
SAMSUNG
02+
TSOP
2255
全新原裝進口自己庫存優(yōu)勢
 詢價
SAMSUNG
2016+
TSOP32
5562
只做進口原裝現(xiàn)貨!或訂貨!假一賠十!
 詢價
SAMSUNG
2020+
SSOP
5
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
SAMSUNG
17+
TSOP
9988
只做原裝進口,自己庫存
 詢價
SAMSANG
19+
TSOP32
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
SAMSUNG
22+
SSOP
5000
全新原裝現(xiàn)貨!自家?guī)齑?
 詢價
更多K4E640812E-TC/L供應商 更新時間2025-2-22 14:02:00

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