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K4G41325FE-HC25中文資料三星數(shù)據(jù)手冊PDF規(guī)格書
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廠商型號 |
K4G41325FE-HC25 |
功能描述 | 4Gb GDDR5 SGRAM E-die 8M x 32Bit x 16 Banks Graphic Double Data Rate 5 Synchronous DRAM (170Ball FBGA) |
文件大小 |
1.97233 Mbytes |
頁面數(shù)量 |
120 頁 |
生產(chǎn)廠商 | Samsung semiconductor |
企業(yè)簡稱 |
Samsung【三星】 |
中文名稱 | 三星半導(dǎo)體官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時間 | 2025-2-24 18:27:00 |
人工找貨 | K4G41325FE-HC25價格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
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K4G41325FE-HC25規(guī)格書詳情
1. FEATURES
? 1.5V + 0.045V power supply for device operations(VDD)
(Specific parts support 1.35V + 0.0405V)
? 1.5V + 0.045V power supply for I/O interface(VDDQ)
(Specific parts support 1.35V + 0.0405V)
? Maximum CK/CK up to 2.25GHz
? Maximum WCK/WCK up to 4.5GHz
? Maximum data rate up to 9.0Gbps/pin
? Halogen free 170 Ball FBGA(RoHS Compliant)
? Single ended interface for data, address and command
? Quarter data-rate differential clock inputs CK/CK for ADD/CMD
? Two half data-rate differential clock inputs WCK/WCK,
each associated with two data bytes(DQ, DBI, EDC)
? Double Data Rate (DDR) data (WCK)
? Single data rate (SDR) command (CK)
? Double data rate (DDR) addressing (CK)
? 16 internal banks for concurrent operation
? 4 bank groups for tCCDL 3 tCK and 4 tCK
? 8n prefetch architecture: 256bit per array read or write access
? Burst length: 8 only
? Programmable CAS latency:
? Programmable write latency :
? WRITE Data mask function via address bus
(single/double byte mask)
? Data bus inversion(DBI) and address bus inversion(ABI)
? Input/output PLL on/off mode
? Address training: Address input monitoring by DQ pins
? WCK2CK clock training with phase information by EDC pins
? Data read and write training via READ FIFO
? READ FIFO pattern preload by LDFF command
? Direct write data load to READ FIFO by WRTR command
? Consecutive read of READ FIFO by RDTR command
? Read/Write data transmission integrity secured by cyclic
redundancy check ; CRC-8(X8+X2+X+1) for EDC
? Read/write EDC on/off mode
? Programmable EDC hold pattern for CDR
? Programmable CRC read latency(CRCRL) range 0 to 3 tCK
? Programmable CRC write latency(CRCWL) range 7 to 14 tCK
? Low Power modes
? RDQS mode on EDC pin
? Auto & self refresh modes
? Auto precharge option for each burst access
? 32ms, auto refresh (16K cycles)
? On-die termination (ODT)
; Nominal values of 60ohm and 120ohm
? Pseudo open drain(POD-15) compatible inputs and outputs
; 40ohm pull down, 60ohm pull up
? ODT and output driver strength auto-calibration with external
resistor ZQ pin(120ohm)
? Programmable termination and driver strength offsets
? Output driver strength adjustment by MRS
? Selectable external or internal VREF for data inputs
;Programmable offsets for internal VREF
? Separate external VREF for address / command inputsdmd
? Vendor ID, FIFO depth and Density info fields for identification
? X32/X16 mode configuration set at power-up with EDC pin
? 16bits support for vendor ID/Density/FIFO depth MRS
? Mirror function with MF pin
? Boundary scan function with SEN pin
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
1822+ |
FBGA170 |
1120 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
SAMSUNG |
16+ |
BGA |
4 |
原裝 |
詢價 | ||
SAMSUNG(三星) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持 |
詢價 | ||
SAMSUNG/三星 |
22+ |
BGA |
54000 |
保證進(jìn)口原裝現(xiàn)貨特價供應(yīng) |
詢價 | ||
SAMSUNG |
24+ |
BGA |
13500 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
SAMSUNG(三星) |
23+ |
NA/ |
8735 |
原廠直銷,現(xiàn)貨供應(yīng),賬期支持! |
詢價 | ||
SAMSUNG |
22+23+ |
BGA |
78502 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
SAMSUNG |
25+ |
BGA |
186686 |
原廠原裝,價格優(yōu)勢!13246658303 |
詢價 | ||
SAMSUNG |
24+ |
BGA |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
SAMSUNG/三星 |
21+ |
BGA |
6850 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 |