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K4H511638D

512Mb D-die DDR SDRAM Specification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D-LA2

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D-LB0

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D-LB3

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D-LCC

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D-TCA0

128Mb DDR SDRAM

Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D-TCA2

128Mb DDR SDRAM

Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D-TCB0

128Mb DDR SDRAM

Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    K4H511638D

  • 制造商：

    SAMSUNG

  • 制造商全稱(chēng)：

    Samsung semiconductor

  • 功能描述：

    DDR SDRAM Product Guide

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SAMSUNG
TSOP
140
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢(xún)價(jià)
SAMSUNG
23+
TSOP
18689
詢(xún)價(jià)
SAMSUNG
08PB
BGA
3600
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢(xún)價(jià)
SAMSUNG
2020+
TSSOP
508
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢(xún)價(jià)
SAMSUNG
17+
TSOP
6200
100%原裝正品現(xiàn)貨
 詢(xún)價(jià)
SAMSUNG
24+
TSOP
4650
詢(xún)價(jià)
SAMSUNG
24+
TSOP
162
詢(xún)價(jià)
SAMSUNG
24+
TSOP
200
原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
SAMSUSNG
23+
TSOP
5000
原裝正品,假一罰十
 詢(xún)價(jià)
SAMSUNG
23+
TSOP
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶(hù)至上/歡迎廣大客戶(hù)來(lái)電查詢(xún)
 詢(xún)價(jià)
更多K4H511638D供應(yīng)商 更新時(shí)間2025-2-24 16:32:00

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