K4S160822DT-G/F8中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG￠s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES

? JEDEC standard 3.3V power supply

? LVTTL compatible with multiplexed address

? Dual banks operation

? MRS cycle with address key programs

-. CAS latency ( 2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

? All inputs are sampled at the positive going edge of the system clock

? Burst read single-bit write operation

? DQM for masking

? Auto & self refresh

? 15.6us refresh duty cycle(2K/32ms)