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K4S560832N

Consumer Memory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560832A

256MbitSDRAM8Mx8bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S560832Ais268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x8,392,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560832B

256MbitSDRAM8Mx8bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S560832Bis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x8,392,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepo

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560832C

256MbitSDRAM8Mx8bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S560832Cis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x8,392,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepos

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560832D

256MbitSDRAM8Mx8bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S560832Dis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x8,392,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepos

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560832H

SDRAMProductGuide

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560832J

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560832J

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S560832J

SDRAMProductGuide

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    K4S560832N

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    256Mb N-die SDRAM

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
SAM
SOP
90
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價(jià)
SAM
23+
TSOP
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
SAMSUNG
2016+
TSOP
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價(jià)
SAMSUNG
24+
TSOP
5000
只做原裝公司現(xiàn)貨
 詢價(jià)
Samsung
1725+
SD32Mx8-75133MHzCL3
12500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
SAMSANG
19+
TSOP
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
SAMSUNG
24+
SOP
30617
三星閃存專營(yíng)品牌店全新原裝熱賣
 詢價(jià)
SAMSUNG
18+
TSOP54
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價(jià)
SAMSUNG
1844+
TSOP
6528
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
TSOP
21+
SAMSUNG
12588
原裝正品,自己庫存 假一罰十
 詢價(jià)
更多K4S560832N供應(yīng)商 更新時(shí)間2025-2-11 16:20:00

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