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K4S561632N

Consumer Memory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632A

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Ais268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632B

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

TheK4S561632Bis268,435,456bitssynchronoushighdatarate DynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarepossibleoneveryclo

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632C

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632C-TC

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAM

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632D

256MbitSDRAM4Mx16bitx4BanksSynchronousDRAMLVTTL

GENERALDESCRIPTION TheK4S561632Dis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x4,196,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockI/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632E

256MbE-dieSDRAMSpecification

GENERALDESCRIPTION TheK4S560432E/K4S560832E/K4S561632Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632E

256MbE-dieSDRAMSpecification54pinsTSOP-II

GENERALDESCRIPTION TheK4S560432E/K4S560832Eis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632H

SDRAMProductGuide

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S561632J

256MbJ-dieSDRAMSpecification

GeneralDescription TheK4S560432J/K4S560832J/K4S561632Jis268,435,456bitssynchronoushighdatarateDynamicRAMorganizedas4x16,777,216wordsby4bits/4x8,388,608wordsby8bits/4x4,194,304wordsby16bits,fabricatedwithSAMSUNGshighperformanceCMOStechnology.Synchronou

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    K4S561632N

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    256Mb N-die SDRAM

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMSUMG
2020+
TSOP
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
SAMSUNG
17+
TSOP
6200
100%原裝正品現(xiàn)貨
 詢價
SAMSUNG
2020+
TSOP54
5186
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
SAMSUNG
16+
TSOP
8800
進口原裝大量現(xiàn)貨熱賣中
 詢價
SAMSUNG
24+
TSOP
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
SAMSUNG
TSOP54
1283
正品原裝--自家現(xiàn)貨-實單可談
 詢價
SAMSUNG
23+
SOP
9680
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
SAMSUNG
23+
TSOP
12000
原裝正品,假一罰十
 詢價
SAMSUNG
24+
原廠原封
2500
原裝進口現(xiàn)貨
 詢價
SAMSUNG
2016+
TSSOP54
7534
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
更多K4S561632N供應(yīng)商 更新時間2025-2-7 11:12:00

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