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K4S643233H-N

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233F

2Mx32MobileSDRAM90FBGACMOSSDRAM

GENERALDESCRIPTION TheK4S643233Fis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233F-SE/I

2Mx32MobileSDRAM90FBGACMOSSDRAM

GENERALDESCRIPTION TheK4S643233Fis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233F-SE/N

2Mx32MobileSDRAM90FBGACMOSSDRAM

GENERALDESCRIPTION TheK4S643233Fis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233F-SESLASHI

2Mx32MobileSDRAM90FBGACMOSSDRAM

GENERALDESCRIPTION TheK4S643233Fis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233F-SESLASHN

2Mx32MobileSDRAM90FBGACMOSSDRAM

GENERALDESCRIPTION TheK4S643233Fis67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG¢shighperformanceCMOStechnology.Synchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclock.I/Otransactionsarep

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H-C

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H-F

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4S643233H-FE

Mobile-SDRAM

GENERALDESCRIPTION TheK4S643233His67,108,864bitssynchronoushighdatarateDynamicRAMorganizedas4x524,288wordsby32bits,fabricatedwithSAMSUNG’shighperformanceCMOStechnology.SynchronousdesignallowsprecisecyclecontrolwiththeuseofsystemclockandI/Otransactionsare

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號:

    K4S643233H-N

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    Mobile-SDRAM

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
SAMSUNG
24+
BGA
48650
專做SAMSUNG系類,全新原裝現(xiàn)貨
詢價(jià)
SANSUNG
24+
BGA
24
詢價(jià)
SANSUNG
6000
面議
19
DIP/SMD
詢價(jià)
SAMSUNG/三星
2447
BGA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價(jià)
-
23+
BGA
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
詢價(jià)
SAM
23+
NA
262
專做原裝正品,假一罰百!
詢價(jià)
SAMSUNG
17+
BGA
9888
全新進(jìn)口原裝,現(xiàn)貨庫存
詢價(jià)
QTC
23+
DIP-8
6500
全新原裝假一賠十
詢價(jià)
SAMSUNG
2022
BGA
2300
原裝現(xiàn)貨,誠信經(jīng)營!
詢價(jià)
SAMSUNG
24+
BGA
3000
全新原裝現(xiàn)貨 優(yōu)勢庫存
詢價(jià)
更多K4S643233H-N供應(yīng)商 更新時(shí)間2025-5-17 16:22:00