IKFW50N60DH3E

Marking：K50DDH3E；Package：PG-TO247-3-AI；TRENCHSTOPTM Advanced Isolation

Features: TRENCHSTOP?technologyoffers: ?Shortcircuitwithstandtime5μsatTvj=175°C ?PositivetemperaturecoefficientinVCE(sat) ?LowEMI ?Verysoft,fastrecoveryanti-paralleldiode ?Maximumjunctiontemperature175°C ?2500VRMSelectricalisolation,50/60Hz,t=1min ?1

IKQ50N120CH7

Marking：K50MCH7；Package：PG-TO247-3-PLUS-NN3.7；High speed 1200 V TRENCHSTOP? IGBT 7 Technology

Highspeed1200VTRENCHSTOP?IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features ?VCE=1200V ?IC=50A ?MaximumjunctiontemperatureTvjmax=175°C ?Best-in-classhighspeedIGBTco-packedw

IKW50N120CH7

Marking：K50MCH7；Package：PG-TO247-3-STD-NN2.5；High speed 1200 V TRENCHSTOP? IGBT 7 Technology

Highspeed1200VTRENCHSTOP?IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features ?VCE=1200V ?IC=50A ?MaximumjunctiontemperatureTvjmax=175°C ?Best-in-classhighspeedIGBTco-packedw

IKW50N60TA

Marking：K50T60A；Package：PG-TO247-3；Designed for DC/AC converters for Automotive Application

Features: AutomotiveAECQ101qualified DesignedforDC/ACconvertersforAutomotiveApplication VerylowVCE(sat)1.5V(typ.) MaximumJunctionTemperature175°C Shortcircuitwithstandtime5μs TRENCHSTOPTMandFieldstoptechnologyfor600V applicationsoffers: ?-ve

IKWH50N65EH7

Marking：K50EEH7；Package：PG-TO247-3-STD-NN4.8；High speed and low saturation voltage 650 V TRENCHSTOP? IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=650V ?IC=50A ?Lowswitchinglosses ?Verylowcollector-emittersaturationvoltageVCEsat ?Verysoft,fastrecoveryantiparalleldiode ?Smoothswitchingbehavior ?Humidityrobustness ?Optimizedforhardswitching,two-andthree-leveltopologies ?Completeprodu

IKY50N120CH7

Marking：K50MCH7；Package：PG-TO247-4-PLUS-NN5.1；High speed 1200 V TRENCHSTOP? IGBT 7 Technology

Highspeed1200VTRENCHSTOP?IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features ?VCE=1200V ?IC=50A ?MaximumjunctiontemperatureTvjmax=175°C ?Best-in-classhighspeedIGBTco-packedw

IKZA50N120CH7

Marking：K50MCH7；Package：PG-TO247-4-STD-NT3.7；High speed 1200 V TRENCHSTOP? IGBT 7 Technology

Highspeed1200VTRENCHSTOP?IGBT7Technologyco-packedwithfullratedcurrent,soft-commutating,ultra-fastrecoveryandlowQrremittercontrolled7Rapiddiode Features ?VCE=1200V ?IC=50A ?MaximumjunctiontemperatureTvjmax=175°C ?Best-in-classhighspeedIGBTco-packedw

IKZA50N65EH7

Marking：K50EEH7；Package：PG-TO247-4-STD-NT3.7；High speed and low saturation voltage 650 V TRENCHSTOP? IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode

Features ?VCE=650V ?IC=50A ?Lowswitchinglosses ?Verylowcollector-emittersaturationvoltageVCEsat ?Verysoft,fastrecoveryantiparalleldiode ?Smoothswitchingbehavior ?Humidityrobustness ?Optimizedforhardswitching,two-andthree-leveltopologies ?Completeprodu

LBAS116LT1G

Marking：K50；Package：SOT-23；Surface Mount Low Leakge Diode

FEATURE ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability ●Wedeclarethatthematerialofproductcompliance withRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplications

LBAS116LT3G

Marking：K50；Package：SOT-23；Surface Mount Low Leakge Diode

FEATURE ●Ultra-SmallSurfaceMountPackage ●VeryLowLeakageCurrent ●LeadFree/RoHSCompliant(Note2) ●QualifiedtoAEC-Q101StandardsforHighReliability ●Wedeclarethatthematerialofproductcompliance withRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplications