K6R1008C1D中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

GENERAL DESCRIPTION

The K6R1016V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 65,536 words by 16 bits. The K6R1016V1D uses 16 common input and output lines and has at output enable pin which operates faster than address access time at read cycle. Also it allows that lower and upper byte access by data byte control (UB, LB). The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016V1D is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward or 48-TBGA.

FEATURES

? Fast Access Time 8,10ns(Max.)

? Low Power Dissipation

Standby (TTL) : 20mA(Max.)

(CMOS) : 5mA(Max.)

Operating K6R1016V1D- 08: 80mA(Max.)

K6R1016V1D-10: 65mA(Max.)

? Single 3.3V Power Supply

? TTL Compatible Inputs and Outputs

? Fully Static Operation

- No Clock or Refresh required

? Three State Outputs

? Center Power/Ground Pin Configuration

? Data Byte Control: LB: I/O1~ I/O8, UB: I/O9~ I/O16

? Standard Pin Configuration:

K6R1016V1D-J: 44-SOJ-400

K6R1016V1D-K: 44-SOJ-400 (Lead-Free)

K6R1016V1D-T: 44-TSOP2-400BF

K6R1016V1D-U: 44-TSOP2-400BF (Lead-Free)

K6R1016V1D-E: 48-TBGA ( 6.0mm X 7.0mm )

with 0.75mm ball pitch

? Operating in Commercial and Industrial Temperature range.