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K9F2G08Q0M中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

K9F2G08Q0M
廠商型號

K9F2G08Q0M

功能描述

FLASH MEMORY

文件大小

601.94 Kbytes

頁面數(shù)量

38

生產(chǎn)廠商 Samsung semiconductor
企業(yè)簡稱

Samsung三星

中文名稱

三星半導體官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-19 20:46:00

K9F2G08Q0M規(guī)格書詳情

GENERAL DESCRIPTION

Offered in 256Mx8bit or 128Mx16bit, the K9F2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns(30ns, only X8 device) cycle time per byte or word(X16 device).. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

FEATURES

· Voltage Supply

-1.8V device(K9F2GXXQ0M): 1.70V~1.95V

-3.3V device(K9F2GXXU0M): 2.7 V ~3.6 V

· Organization

- Memory Cell Array

-X8 device(K9F2G08X0M) : (256M + 8,192K)bit x 8bit

-X16 device(K9F2G16X0M) : (128M + 4,096K)bit x 16bit

- Data Register

-X8 device(K9F2G08X0M): (2K + 64)bit x8bit

-X16 device(K9F2G16X0M): (1K + 32)bit x16bit

- Cache Register

-X8 device(K9F2G08X0M) : (2K + 64)bit x8bit

-X16 device(K9F2G16X0M) : (1K + 32)bit x16bit

· Automatic Program and Erase

- Page Program

-X8 device(K9F2G08X0M) : (2K + 64)Byte

-X16 device(K9F2G16X0M) : (1K + 32)Word

- Block Erase

-X8 device(K9F2G08X0M) : (128K + 4K)Byte

-X16 device(K9F2G16X0M) : (64K + 2K)Word

· Page Read Operation

- Page Size

- X8 device(K9F2G08X0M) : 2K-Byte

- X16 device(K9F2G16X0M) : 1K-Word

- Random Read : 25ms(Max.)

- Serial Access : 50ns(Min.)

30ns(Min., K9F2G08U0M only)

產(chǎn)品屬性

  • 型號:

    K9F2G08Q0M

  • 制造商:

    SAMSUNG

  • 制造商全稱:

    Samsung semiconductor

  • 功能描述:

    FLASH MEMORY

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