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KM416V10CT-L45

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5o

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KM416V10CT-L5

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5o

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KM416V10CT-L6

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5o

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KM416V1200B

1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION Thisisafamilyof1,048,576x16bitFastPageModeCMOSDRAMs.FastPageModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-5,-6or-7),powerconsumption(NormalorLowp

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KM416V1200C

1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION Thisisafamilyof1,048,576x16bitFastPageModeCMOSDRAMs.FastPageModeoffershighspeedrandomaccessofmemorycellswithinthesamerow.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-5or-6),powerconsumption(NormalorLowpowe

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KM416V1204C

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5o

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KM416V1204C-45

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5o

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KM416V1204C-5

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5o

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KM416V1204C-6

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5o

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KM416V1204C-L45

1M x 16Bit CMOS Dynamic RAM with Extended Data Out

DESCRIPTION Thisisafamilyof1,048,576x16bitExtendedDataOutCMOSDRAMs.ExtendedDataOutModeoffershighspeedrandomaccessofmemorycellswithinthesamerow,socalledHyperPageMode.Powersupplyvoltage(+5.0Vor+3.3V),refreshcycle(1KRef.or4KRef.),accesstime(-45,-5o

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    KM41

  • 制造商:

    knitter-switch

  • 制造商:

    TE Connectivity

  • 功能描述:

    KNOB WHITE

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SECKOREA
25+
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1200
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SAMSUNG
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BGA
6980
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SEC
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5000
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9734+
TSOP-40
855
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PLCC
35200
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5000
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SAMSUNG
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12588
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SAM
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5850
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171
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更多KM41供應(yīng)商 更新時(shí)間2025-4-23 14:33:00