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KP8N60F

iscN-ChannelMOSFETTransistor

?DESCRITION ?Suitableforactivepowerfactorcorrectionandswitchingmode Powersupplies ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.58? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice perfor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KP8N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,I

KECKEC CORPORATION

KEC株式會社

KPS8N60D

ThisSuperJunctionMOSFEThasbettercharacteristics

KECKEC CORPORATION

KEC株式會社

KPS8N60F

ThisSuperJunctionMOSFEThasbettercharacteristics

KECKEC CORPORATION

KEC株式會社

KSM8N60

AdvancedhighcelldenitytrenchtechnologyforultraRDS

KERSEMI

Kersemi Electronic Co., Ltd.

KSM8N60C

600VN-CHANNELMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB8N60

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF8N60

Lowgatecharge.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF8N60C

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KX8N60C

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

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