L2SA1365ELT1G中文資料樂山無線電數(shù)據(jù)手冊PDF規(guī)格書

DESCRIPTION

L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor,

designed with high collector current and small VCE(sat).

FEATURE

● Small collector to emitter saturation voltage.

VCE(sat)=-0.2V typ

● Excellent linearity of DC forward current gain.

● Super mini package for easy mounting

● We declare that the material of product compliance with RoHS requirements.

● We declare that the material of product is ROHS compliant

● High collector current I =-1A CM

● High gain band width product f =180MHz typ T

● S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.

APPLICATION

Small type motor drive, relay drive, power supply.