LC35256D-10中文資料三洋數(shù)據(jù)手冊(cè)PDF規(guī)格書

Overview

The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS memory cell, and feature low-voltage operation, low current drain, and an ultralow standby current.

Features

? Supply voltage range: 2.7 to 5.5 V

— 5-V operation: 5.0 V±10

— 3-V operation: 2.7 to 3.6 V

? Access times

— 5-V operation

LC35256DM, DT-70: 70 ns (max)

LC35256D, DM, DT-10: 100 ns (max)

— 3-V operation

LC35256DM, DT-70: 200 ns (max)

LC35256D, DM, DT-10: 500 ns (max)

? Standby current

— 5-V operation: 1.0 μA (Ta ≤ 60°C),

5.0 μA (Ta ≤ 85°C)

— 3-V operation: 0.8 μA (Ta ≤ 60°C),

4.0 μA (Ta ≤ 85°C)

? Operating temperature range: –40 to +85°C

? Data retention supply voltage: 2.0 to 5.5 V

? All I/O levels

— 5-V operation: TTL compatible

— 3-V operation: VCC – 0.2 V/0.2 V

? Shared I/O pins and 3-state outputs

? No clock signal required.

? Packages

— 28-pin DIP (600 mil) plastic package: LC35256D

— 28-pin SOP (450 mil) plastic package: LC35256DM

— 28-pin TSOP (8 × 13.4 mm) plastic package: LC35256DT