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LH28F320SKTD-L70

32M Flash Memory

SHARP’sLH28F320SKTD-L70DualWorkFlashmemorywithSmart3/5technologyisahigh-density,low-cost,nonvolatile,read/writestoragesolutionforawiderangeofapplications. 32-MBIT(2MBx8/1MBx16x2Bank) Smart3/5DualWorkFlashMEMORY ■Dual16M-bitBanksEnablethe SimultaneousRead/Wr

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F400BG

4M-BIT(256KBx16) SmartVoltage Flash MEMORY

4M-BIT(256Kx16)SmartVoltageFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F400BG-L12

4M-BIT(256KBx16) SmartVoltage Flash MEMORY

4M-BIT(256Kx16)SmartVoltageFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F400BG-L85

4M-BIT(256KBx16) SmartVoltage Flash MEMORY

4M-BIT(256Kx16)SmartVoltageFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F400SU

4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory

4Mbit(512Kbitx8,256Kbitx16)5VSingleVoltageFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F400SUB

4M (512K ? 8, 256K ? 16) Flash Memory

INTRODUCTION Sharp’sLH28F400SU4MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,3.3Vlowpoweroperationandveryhighread/writeperformance,theLH28F400SUi

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F400SUB-Z0

4M (512K ? 8, 256K ? 16) Flash Memory

INTRODUCTION Sharp’sLH28F400SU4MFlashMemoryisarevolutionaryarchitecturewhichenablesthedesignoftrulymobile,highperformance,personalcomputingandcommunicationproducts.Withinnovativecapabilities,3.3Vlowpoweroperationandveryhighread/writeperformance,theLH28F400SUi

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F400SUE-NC60

4M (512K ? 8, 256K ? 16) Flash Memory

DESCRIPTION TheLH28F400SU-NCisahighperformance4M(4,194,304)blockerasablenon-volatilerandomaccessmemoryorganizedaseither256K×16or512K×8.TheLH28F400SU-NCincludesthirty-two16K(16,384)blocks.AchipmemorymapisshowninFigure5. Theimplementationofanewarchitectu

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F400SUE-NC80

4M (512K ? 8, 256K ? 16) Flash Memory

DESCRIPTION TheLH28F400SU-NCisahighperformance4M(4,194,304)blockerasablenon-volatilerandomaccessmemoryorganizedaseither256K×16or512K×8.TheLH28F400SU-NCincludesthirty-two16K(16,384)blocks.AchipmemorymapisshowninFigure5. Theimplementationofanewarchitectu

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

LH28F400SUHE-NC80

4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory

4Mbit(512Kbitx8,256Kbitx16)5VSingleVoltageFlashMemory

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

詳細(xì)參數(shù)

  • 型號(hào):

    LH2

  • 功能描述:

    Buffer/Voltage Follower

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8000
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7000
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SHARP
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4652
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12
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TSOP56
7750
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SHARP
23+
SSOP/56
7000
絕對(duì)全新原裝!100%保質(zhì)量特價(jià)!請(qǐng)放心訂購(gòu)!
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更多LH2供應(yīng)商 更新時(shí)間2025-4-22 11:30:00