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LMBR350FT1G

Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A

ReverseVoltage20to200VForwardCurrent3.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardri

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LMBR360FT1G

Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A

ReverseVoltage20to200VForwardCurrent3.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardri

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LMBR380FT1G

Schottky Barrier Rectifiers Reverse Voltage 20 to 200V Forward Current 3.0A

ReverseVoltage20to200VForwardCurrent3.0A FEATURES *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardri

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LMBR4020H3T5G

Marking：E；Package：DFN1608-2；Schottky Barrier Diode

FEATURES ●Smallmoldtype. ●LowIR ●Highreliability. ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. APPLICATIONS ●Lowcurrentrectification ●Siliconepitaxialplanar

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LMBT2222ATT1G

General Purpose Transistor

GeneralPurposeTransistor NPNSilicon NPNSiliconThesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC?89packagewhichisdesignedforlowpowersurfacemountapplications. Features ?WedeclarethatthematerialofproductcompliancewithRoH

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LMBT2222ATT1G

Marking：1P；Package：SC89；General Purpose Transistor NPN Silicon

FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LMBT2222ATT1G_V01

General Purpose Transistor NPN Silicon

FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LMBT2222ATT3G

Marking：1P；Package：SC89；General Purpose Transistor NPN Silicon

FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LMBT2222AWT1G

Marking：P1；Package：SC70；General Purpose Transistors NPN Silicon

FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LMBT2222AWT1G_V01

General Purpose Transistors NPN Silicon

FEATURES ●Wedeclarethatthematerialofproductcompliancewith RoHSrequirementsandHalogenFree. ●S-prefixforautomotiveandotherapplicationsrequiring uniquesiteandcontrolchangerequirements;AEC-Q101 qualifiedandPPAPcapable.

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    LMB

  • 制造商：

    TE Connectivity Laird

  • 類別：

    RF/IF，射頻/中頻和 RFID > RF 配件

  • 包裝：

    散裝

  • 描述：

    ACCY SUB MOUNT 3/8

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23+
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2022+
1356
全新原裝 貨期兩周
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更多LMB供應(yīng)商 更新時間2021-9-14 10:50:00

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