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LMS1902

N-Channel 30 V (D-S) MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?LowOn-Resistance ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters,HighSpeedSwitching

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MAX1902

500kHzMulti-Output,Low-NoisePower-SupplyControllersforNotebookComputers

GeneralDescription TheMAX1901/MAX1902/MAX1904arebuck-topology,step-down,switch-mode,power-supplycontrollersthatgeneratelogic-supplyvoltagesinbattery-poweredsystems.Thesehigh-performance,dual/triple-outputdevicesincludeon-boardpower-upsequencing,power-goodsignalingwith

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX1902EAI

500kHzMulti-Output,Low-NoisePower-SupplyControllersforNotebookComputers

GeneralDescription TheMAX1901/MAX1902/MAX1904arebuck-topology,step-down,switch-mode,power-supplycontrollersthatgeneratelogic-supplyvoltagesinbattery-poweredsystems.Thesehigh-performance,dual/triple-outputdevicesincludeon-boardpower-upsequencing,power-goodsignalingwith

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX1902ETJ

500kHzMulti-Output,Low-NoisePower-SupplyControllersforNotebookComputers

GeneralDescription TheMAX1901/MAX1902/MAX1904arebuck-topology,step-down,switch-mode,power-supplycontrollersthatgeneratelogic-supplyvoltagesinbattery-poweredsystems.Thesehigh-performance,dual/triple-outputdevicesincludeon-boardpower-upsequencing,power-goodsignalingwith

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MC1902

INTEGRATEDCIRCUITS

INTEGRATEDCIRCUITSFROMMOTOROLA MDTLintegratedcircuitsprovideanexcellentbalanceofspeedpowerdissipation,andnoiseimmunityforgeneralpurposedigitalapplications.Thelineincludesmanymultifunctiontypes.AdditionallogicpowerisprovidedbythewiredORcapabilityofthebasicM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MDD1902

SingleN-channelTrenchMOSFET100V,40A,28m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDD1902RH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=40A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=28mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MDD1902RH

SingleN-channelTrenchMOSFET100V,40A,28m(ohm)

MGCHIP

MagnaChip Semiconductor.

MDD1902RH

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MGF1902B

TAPECARRIERLOWNOISEGaAsFET???

DESCRIPTION TheMGF1902BisalownoiseGaAsFETwithanN-channelSchottkygate,whichisdesignedforuseinStoXbandamplifiersandoscillators.Thehermeticallysealedmetalceramicpackageassuresminimumparasiticlosses,andhasaconfigurationsuitableformicrostripcircuits. FEATURE

MitsubishiMitsubishi Electric Semiconductor

三菱電機(jī)三菱電機(jī)株式會(huì)社

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50
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8560
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SOLUTIONS
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TQFP
6500
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NSC
2003+
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60
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NS
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更多LMS1902供應(yīng)商 更新時(shí)間2025-4-3 10:00:00

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