LP7512中文資料FILTRONIC數(shù)據(jù)手冊PDF規(guī)格書
LP7512規(guī)格書詳情
DESCRIPTION AND APPLICATIONS
The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for ultra low noise and usable gain to 40 GHz. The LP7512 also features Si3N4 passivation and is available in a variety of packages.
Typical applications include low noise receiver preamplifiers for commercial applications including wireless systems and radio link systems.
FEATURES
? 0.6 dB Noise Figure at 12 GHz
? 12 dB Associated Gain at 12 GHz
? Low DC Power Consumption
? Excellent Phase Noise
產(chǎn)品屬性
- 型號：
LP7512
- 制造商：
Cooper Wiring Devices
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
LP |
22+ |
DIP8 |
43271 |
原裝正品現(xiàn)貨,可開13個點稅 |
詢價 | ||
EPCOS |
23+ |
SMD |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
LP |
2023+ |
DIP |
3000 |
進(jìn)口原裝現(xiàn)貨 |
詢價 | ||
RFMD |
2021+ |
P70 |
3000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | ||
LP |
20+ |
QFP |
500 |
樣品可出,優(yōu)勢庫存歡迎實單 |
詢價 | ||
LD |
24+ |
SOP8 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
LOWPOWER |
13+ |
QFP64 |
5600 |
普通 |
詢價 | ||
LP |
24+ |
NA/ |
160 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
LP |
24+ |
DIP-8 |
1323 |
詢價 | |||
LP |
23+ |
QFP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 |
