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MICRF219AAYQS

300MHzto450MHzASK/OOKReceiverwithAuto-Poll,andRSSI

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

MICRF219AAYQS

ASK/OOKReceiver

GeneralDescription TheMICRF219Aisa300MHzto450MHzsuper-heterodyne,image-reject,RFreceiverwithautomaticgaincontrol,ASK/OOKdemodulator,andanalogRSSIoutput.Itonlyrequiresacrystalandaminimumnumberofexternalcomponentstoimplement.TheMICRF219Aisidealforlow-cost,l

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

MICRF219AYQS

300MHzto450MHzASKReceiverwithRSSI,Auto-Poll,Bit-Che

MicrelMicrel Semiconductor

麥瑞半導(dǎo)體

MO-219

TheFlipStack?CSPfamilyutilizesAmkor’sindustryleadingChipArray?BallGridArray(CABGA)manufacturingcapabilities

FEATURES Packageheightdownto0.6mm Design,assemblyandtestcapabilitiesthatenablestackingcombinationsofmemory,logicandmixedsignaltypedevices EstablishedpackageinfrastructurewithstandardCABGAandfcCSPfootprints Consistentproductperformancewithhighyieldsandrel

amkor

Amkor Technology

MZ219

3WATTZENERDIODES

3WATTZENERDIODES AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

DIGITRON

Digitron Semiconductors

MZ219

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MicrosemiMicrosemi Corporation

美高森美美高森美公司

NCSL219BT

SPECIFICATIONSFORWARMWHITELED

NICHIANichia Corporation&Subsidiaries

日亞化學(xué)工業(yè)株式會(huì)社

NCSW219BT

SPECIFICATIONSFORWHITELED

NICHIANichia Corporation&Subsidiaries

日亞化學(xué)工業(yè)株式會(huì)社

NE219

NPNSILICONHIGHFREQUENCYTRANSISTOR

DESCRIPTIONANDAPPLICATIONS TheNE219seriesofNPNsiliconbipolartransistorsisdesignedforsmallsignalamplifierandoscillatorapplicationsup6GHz. FEATURES ●HIGHfr:8GHz ●LOWNOISE: 1dBat0.5GHz 2.2dBat2GHz ●HIGHCOLLECTORCURRENT:80mA ●HIGHOSCILLATORPOWE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NTE219

SiliconPowerTransistorAudioPowerAmp,MediumSpeedSwitch

Description: TheNTE130(NPN)andNTE219(PNP)aresiliconcomplementarytransistorsinaTO3typecasedesignedforgeneralpurposeswitchingandamplifierapplications. Features: ?DCCurrentGain:hFE=20–70@IC=4A ?Collector–EmitterSaturationVoltage:VCE(sat)=1.1V(Max

NTE

NTE Electronics

詳細(xì)參數(shù)

  • 型號(hào)：

    LTL219

  • 功能描述：

    Optoelectronic

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LED
880000
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6980
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50000
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