LX5530LQRF/IF射頻/中頻RFID的射頻放大器規(guī)格書PDF中文資料

DESCRIPTION

The LX5530 is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9 – 5.9 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3 – 5V, with high power gain of up to 33dB. When operated at 5V supply voltage, it provides up to +25dBm linear output power for 802.11a OFDM spectrum mask compliance, and low EVM of 3 for up to +23dBm output power in the 4.9-5.9GHz band.

KEY FEATURES

Broadband 4.9 – 5.9GHz Operation

Advanced InGaP HBT

Single-Polarity 3 – 5V Supply

Power Gain up to ~ 33dB for VC=5V, Icq = 250mA

Power Gain > ~28dB across 4.9- 5.85GHz

OFDM Mask Compliance Power Pout ~ +25dBm over 4.9- 5.85GHz (ACPR ~ -50dBc @ ±30MHz Offset)

Pout up to +23dBm with EVM ~3 (VC = 5V)

EVM < ~2.5 for Pout=+21dBm across 4.9-5.85GHz (VC = 5V)

EVM < ~2.5 for Pout=+19dBm across 4.9-5.85GHz (VC = 4V)

Total Current ~250mA for Pout =+20dBm, Duty Cycle = 99(VC= 4V)

Complete On-Chip Input Match

Simple Output Match for Optimal Broadband EVM

On-Chip RF Decoupling

Temperature-Compensated On-Chip Output Power Detector with Wide Dynamic Range

Small Footprint: 3x3mm

Low Profile: 0.9mm

APPLICATIONS

FCC U-NII Wireless

IEEE 802.11a

HiperLAN2

5GHz Cordless Phone

IEEE 802.16 WiMAX