M24M02-DR集成電路（IC）的存儲器規(guī)格書PDF中文資料

M24M02-DR屬于集成電路（IC）的存儲器。由意法半導(dǎo)體集團制造生產(chǎn)的M24M02-DR存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。

Features

? Compatible with following I2C bus modes:

– 1 MHz

– 400 kHz

– 100 kHz

? Memory array:

– 2 Mbit (256 Kbyte) of EEPROM

– Page size: 256 byte

– Additional write lockable page (M24M02-DR order codes)

? Single supply voltage:

– 1.8 V to 5.5 V over –40 °C / +85 °C

? Write time:

– Byte write within 10 ms

– Page write within 10 ms

? Random and sequential read modes

? Write protect of the whole memory array

? Enhanced ESD/latch-Up protection

? More than 4 million write cycles

? More than 200-years data retention

? Packages:

– SO8N ECOPACK2

– WLCSP ECOPACK2

– Unsawn wafer (each die is tested)

– RoHS compliant and halogen-free (ECOPACK2)