M28F010中文資料英特爾數(shù)據(jù)手冊PDF規(guī)格書

1024K (128K x 8) CMOS FLASH MEMORY

Intel’s M28F010 is a 1024-Kbit byte-wide, in-system re-writable, CMOS nonvolatile flash memory. It is organized as 131,072 bytes of 8 bits and is available in a 32-pin hermetic CERDIP package. The M28F010 is also available in 32-contact leadless chip carrier, J-lead, and Flatpack surface mount packages. It offers the most cost-effective and reliable alternative for updatable nonvolatile memory. The M28F010 adds electrical chip-erasure and reprogramming to EPROM technology. Memory contents of the M28F010 can be erased and reprogrammed 1) in a socket; 2) in a PROM programmer socket; 3) on-board during subassembly test; 4) insystem during final test; and 5) in-system after-sale.

■ Flash Electrical Chip-Erase

— 5 Second Typical

■ Quick-Pulse Programming Algorithm

— 10 μs Typical Byte-Program

— 2 Second Typical Chip-Program

■ Single High Voltage for Writing and Erasing

■ CMOS Low Power Consumption

— 30 mA Maximum Active Current

— 100 μA Maximum Standby Current

■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

■ Noise Immunity Features

— ±10 VCC Tolerance

— Maximum Latch-Up Immunity through EPI Processing

■ ETOX-III Flash-Memory Technology

— EPROM-Compatible Process Base

— High-Volume Manufacturing Experience

■ Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts

■ 10,000 Program/Erase Cycles Minimum

■ Available in Three Product Grades:

— QML: -55°C to +125°C (TC)

— SE2: -40°C to +125°C (TC)

— SE3: -40°C to +110°C (TC)