首頁>M28F101-100XN3>規(guī)格書詳情
M28F101-100XN3中文資料意法半導體數(shù)據(jù)手冊PDF規(guī)格書
M28F101-100XN3規(guī)格書詳情
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or ganised as 128K bytes of 8 bits.It uses a command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.
Features
? 5V±10 SUPPLY VOLTAGE
? 12V PROGRAMMING VOLTAGE
? FAST ACCESS TIME: 70ns
? BYTE PROGRAMING TIME: 10μs typical
? ELECTRICAL CHIP ERASE in 1s RANGE
? LOW POWER CONSUMPTION
– Stand-by Current: 100μA max
? 10,000 ERASE/PROGRAM CYCLES
? INTEGRATED ERASE/PROGRAM-STOP TIMER
? OTP COMPATIBLE PACKAGES and PINOUTS
? ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 07h
產(chǎn)品屬性
- 型號：
M28F101-100XN3
- 制造商：
STMICROELECTRONICS
- 制造商全稱：
STMicroelectronics
- 功能描述：
1 Mb 128K x 8, Chip Erase FLASH MEMORY
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2020+ |
NA |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
NSC |
08+ |
DIP-8 |
40 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ST/意法 |
23+ |
NA/ |
1200 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ST/意法 |
24+ |
PLCC |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
ST/意法 |
24+ |
PLCC |
60 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
ST/意法 |
22+ |
PLCC32 |
9000 |
原裝正品 |
詢價 | ||
STMICROELECT |
05+ |
原廠原裝 |
4272 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
STM |
23+ |
NA |
685 |
專做原裝正品,假一罰百! |
詢價 | ||
ST |
23+ |
PLCC-32 |
9526 |
詢價 | |||
ST |
2315+ |
PLCC |
3886 |
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價 |
